TSHG6410

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 23-Aug-11

1

Document Number: 81870

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Speed Infrared Emitting Diode, 850 nm,

GaAlAs Double Hetero

DESCRIPTION

TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength:



• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

 = ± 18°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with CMOS cameras

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

Note

www.vishay.com/doc?99902

APPLICATIONS

• Infrared radiation source for operation with CMOS

cameras

• High speed IR data transmission

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT

 (deg)

p (nm)

tr (ns)

TSHG6410

90

± 18

850

20

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHG6410

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1A

Power dissipation

180

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm,

soldered on PCB

230

K/W