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CS30L60CT-A 데이터시트(PDF) 1 Page - Chip Integration Technology Corporation

부품명 CS30L60CT-A
상세설명  Super Low Barrier High Voltage Power Rectifier
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제조업체  CITC [Chip Integration Technology Corporation]
홈페이지  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

CS30L60CT-A 데이터시트(HTML) 1 Page - Chip Integration Technology Corporation

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1
■ Features
Mechanical data
■ Maximum ratings and electrical characteristics
O
Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
I
O
I
F S M
I
R R M
T , T
J
S T G
Forward rectified current (total device)
Forward surge current (per diode)
Thermal resistance(1)
Operating and Storage temperature
Parameter
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Conditions
Symbol
CS30L60CT-A
UNIT
-55 ~ +150
30
280
A
A
O C/W
O C
4
R
θ J C
Junction to case
Peak repetitive reverse surge current
(per diode)
A
2us - 1kHz
3
Marking code
CS30L60CT
DC blocking voltage
Working peak reverse voltage
Peak repetitive reverse voltage
V
R M
V
RW M
V
R R M
60
V
V
F
I
R
Forward voltage drop (per diode)
Reverse current (per diode)
Parameter
O
V
= V
T = 25 C
R
R R M
J
O
V
= V
T = 125 C
R
R R M
J
Conditions
Symbol
TYP.
UNIT
60
0.5
mV
mA
MIN.
MAX.
O
I = 15A, T = 25 C
F
J
O
I = 15A, T = 125 C
F
J
550
600
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Repetitive peak avalanche energy
(per diode)
W
8600
P
A R M
O
1us, 25 C
Non-repetitive avalanche energy
(per diode)
mJ
400
E
A S
O
T = 25 C, I
= 20A, L = 8.5mH, tp = 1ms
J
A S
CS30L60CT-A
• Epoxy : UL94-V0 rated flame retardant.
.
• Case : JEDEC TO-220AB molded plastic body
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
ed.
• Polarity: As mark
.
• Mounting Position : Any
.
• Weight : Approximated 2.25 gram
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7
■ Outline
TO-220AB
symbol
Dimensions in inches(millimeters)
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Min
Max
0.398(10.1)
0.406(10.3)
0.236(6.0)
0.252(6.4)
0.579(14.7)
0.594(15.1)
0.543(13.8)
0.551(14.0)
0.143(3.63)
0.159(4.03)
0.104(2.64)
0.112(2.84)
0.335(8.5)
0.350(8.9)
0.046(1.17)
0.054(1.37)
0.028(0.71)
0.036(0.91)
0.098(2.49)
0.102(2.59)
0.176(4.47)
0.184(4.67)
0.046(1.17)
0.054(1.37)
0.102(2.6)
0.110(2.8)
0.019(0.28)
0.021(0.48)
0.147(3.74)
0.155(3.94)
symbol
Dimensions in inches(millimeters)
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Min
Max
0.394(10.0)
0.413(10.5)
0.228(5.8)
0.268(6.8)
0.570(14.48)
0.625(15.87)
0.519(13.18)
0.558(14.18)
0.089(3.5)
0.099(3.9)
0.100(2.54)
0.120(3.04)
0.330(8.38)
0.350(8.9)
0.045(1.15)
0.060(1.52)
0.029(0.75)
0.037(0.95)
0.095(2.42)
0.105(2.66)
0.160(4.07)
0.190(4.82)
0.045(1.15)
0.055(1.39)
0.080(2.04)
0.110(2.8)
0.013(0.33)
0.019(0.52)
0.148(3.75)
0.156(3.95)
Alternate
Marking code
A
ØP
B
1
2
3
J
L
C
D
E
F
G
H
I
K
M
N
Marking code
A
ØP
B
1
2
3
J
L
C
D
E
F
G
H
I
K
M
N
C
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Chip Integration Technology Corporation
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I
F ( AV )
2x15A
V
R R M
T
J
V
( Ty p )
60V
O
150 C
0.53V
530


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