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BF244A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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BF244A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page BF244A BF244B BF244C N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BF244A / BF244B / BF244C PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage - 30 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA Tstg Storage Temperature Range -55 to +150 °C S G D TO-92 1997 Fairchild Semiconductor Corporation |
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