전자부품 데이터시트 검색엔진 |
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FCB199N65S3 데이터시트(PDF) 3 Page - ON Semiconductor |
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FCB199N65S3 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 10 page www.onsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Source-Drain Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCB199N65S3 FCB199N65S3 D2-PAK Tape and Reel 330 mm 24 mm 800 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25oC- 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, TC = 125oC - 0.89 - IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1.4 mA 2.5 - 4.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 7 A - 170 199 m Ω gFS Forward Transconductance VDS = 20 V, ID = 7 A -10 - S Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz - 1225 - pF Coss Output Capacitance - 30 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 277 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 43 - pF Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 7 A, VGS = 10 V (Note 4) -30 - nC Qgs Gate to Source Gate Charge - 7.4 - nC Qgd Gate to Drain “Miller” Charge - 13 - nC ESR Equivalent Series Resistance f = 1 MHz - 7 - Ω td(on) Turn-On Delay Time VDD = 400 V, ID = 7 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) -19 - ns tr Turn-On Rise Time - 23 - ns td(off) Turn-Off Delay Time - 52 - ns tf Turn-Off Fall Time - 15 - ns IS Maximum Continuous Source to Drain Diode Forward Current - - 14 A ISM Maximum Pulsed Source to Drain Diode Forward Current - - 35 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 7 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 7 A, dIF/dt = 100 A/μs - 256 - ns Qrr Reverse Recovery Charge - 3.5 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.5 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ 400 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
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