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SI2319DS 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI2319DS 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si2319DS Vishay Siliconix www.vishay.com 4 Document Number: 72315 S-40844—Rev. B, 03-May-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) −0.4 −0.2 0.0 0.2 0.4 0.6 −50 −25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2468 10 TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Square Wave Pulse Duration (sec) VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) TJ − Temperature (_C) Time (sec) ID = 3 A ID = 250 mA 20 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25_C 1 TA = 25_C Single Pulse Safe Operating Area, Junction-to-Case VDS − Drain-to-Source Voltage (V) 100.0 1.0 0.1 1 10 100 0.01 10.0 0.1 Limited by rDS(on) TA = 25_C Single Pulse 10 ms 100 ms 10 ms 100 ms 1 ms dc, 100 s, 10 s, 1 s 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 10 |
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