SI4427BDY-T1 datasheet(2/5 Pages) VISHAY

부품명	SI4427BDY-T1

상세설명	P-Channel 30-V (D-S) MOSFET

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Si4427BDY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72295

S-31411—Rev. A, 07-Jul-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 mA

- 0.60

- 1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 24 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 24 V, VGS = 0 V, TJ = 55_C

-5

mA

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = - 10 V

-50

A

VGS = - 10 V, ID = - 12.6 A

0.0088

0.0105

Drain-Source On-State Resistancea

rDS(on)

VGS = - 4.5 V, ID = - 11.5 A

0.0105

0.0125

W

DS(on)

VGS = - 2.5 V, ID = - 5.1 A

0.0150

0.0195

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 12.6 A

44

S

Diode Forward Voltagea

VSD

IS = - 2.5 A, VGS = 0 V

- 0.8

- 1.2

V

Dynamicb

Total Gate Charge

Qg

47.2

70

Gate-Source Charge

Qgs

VDS = - 15 V, VGS = - 4.5 V, ID = - 12.6 A

9.5

nC

Gate-Drain Charge

Qgd

16.6

Turn-On Delay Time

td(on)

12

20

Rise Time

tr

VDD = - 15 V, RL = 15 W

15

25

Turn-Off Delay Time

td(off)

VDD = - 15 V, RL = 15 W

ID ^ - 1 A, VGEN = - 10 V, RG = 6 W

242

360

ns

Fall Time

tf

110

165

Source-Drain Reverse Recovery Time

trr

IF = - 2.5 A, di/dt = 100 A/ms

70

110

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

0

1234

5

VGS = 10 thru 2.5 V

TC = 125_C

-55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

2 V

1.5 V

유사한 부품 번호 - SI4427BDY-T1

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4427BDY	164Kb / 8P	P-Channel 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4427BDY	164Kb / 8P	P-Channel 30-V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI4427BDY-T1

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More results

SI4427BDY-T1 데이터시트(PDF) 2 Page - Vishay Siliconix

SI4427BDY-T1 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI4427BDY-T1

유사한 설명 - SI4427BDY-T1

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