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KFG5616Q1M 데이터시트(PDF) 4 Page - Samsung semiconductor |
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KFG5616Q1M 데이터시트(HTML) 4 Page - Samsung semiconductor |
4 / 93 page OneNAND256 FLASH MEMORY 4 Document Title OneNAND Revision History The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. Revision No. 1.2 Remark Draft Date Jun. 15, 2005 History 1. Added Copyright Notice in the beginning 2. Corrected Errata 3. Updated Icc2, Icc4, Icc5, Icc6 and ISB 4. Revised INT pin description 5. Added OTP erase case NOTE 6. Revised case definitions of Interrupt Status Register 7. Added a NOTE to Command register 8. Added ECClogSector Information table 9. Removed ’data unit based data handling’ from description of Device Operation 10. Revised description on Warm/Hot/NAND Flash Core Reset 11. Revised Warm Reset Timing 12. Added note for OTP L in Internal Register Reset 13. Removed all block lock default case after cold or warm reset 14. Added explanation for each prohibited case in protect mode 15. Revised the case of writing other commands during Multi Block Erase routine 16. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode 17. Revised OTP operation description 18. Added supplemental explanation for ECC Operation 19. Removed classification of ECC error from ECC Operation 20. Removed redundant sentance from ECC Bypass Operation 21. Added technical note for Boot Sequence 22. Added technical note for INT pin connection guide 23. Excluded tOEH from Asynchronous Read Table 24. Revised Asycnchronous Read timing diagram for CE don’t care mode 25. Revised Asynchronous Write timing diagram for CE don’t care mode 26. Revised Load operation timing diagram for CE don’t care mode |
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