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BY459F-1500 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BY459F-1500
상세설명  Rectifier diode fast, high-voltage
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BY459F-1500 데이터시트(HTML) 2 Page - NXP Semiconductors

  BY459F-1500 Datasheet HTML 1Page - NXP Semiconductors BY459F-1500 Datasheet HTML 2Page - NXP Semiconductors BY459F-1500 Datasheet HTML 3Page - NXP Semiconductors BY459F-1500 Datasheet HTML 4Page - NXP Semiconductors BY459F-1500 Datasheet HTML 5Page - NXP Semiconductors BY459F-1500 Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 6.5 A
-
0.95
1.3
V
I
F = 6.5 A; Tj = 125 ˚C
-
0.85
1.2
V
I
R
Reverse current
V
R = VRWMmax
-
-
0.25
mA
V
R = VRWMmax; Tj = 125 ˚C
-
-
1.0
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
fr
Forward recovery voltage
I
F = 6.5 A; dIF/dt = 50 A/µs-
8
14
V
t
fr
Forward recovery time
I
F = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V
-
170
250
ns
I
F = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V
-
350
-
ns
t
rr
Reverse recovery time
I
F = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V
-
250
350
ns
Q
s
Reverse recovery charge
I
F = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V
-
2.0
3.0
µC
August 1996
2
Rev 1.200


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