전자부품 데이터시트 검색엔진 |
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BY459F-1500 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BY459F-1500 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Rectifier diode BY459F-1500 fast, high-voltage THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W R th j-a Thermal resistance junction to in free air - 55 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 6.5 A - 0.95 1.3 V I F = 6.5 A; Tj = 125 ˚C - 0.85 1.2 V I R Reverse current V R = VRWMmax - - 0.25 mA V R = VRWMmax; Tj = 125 ˚C - - 1.0 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V fr Forward recovery voltage I F = 6.5 A; dIF/dt = 50 A/µs- 8 14 V t fr Forward recovery time I F = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V - 170 250 ns I F = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V - 350 - ns t rr Reverse recovery time I F = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V - 250 350 ns Q s Reverse recovery charge I F = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V - 2.0 3.0 µC August 1996 2 Rev 1.200 |
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